A 10-GHz 15-dB four-stage distributed amplifier in 0.18 µm CMOS process
نویسندگان
چکیده
This paper presents a four-stage CMOS distributed amplifier (DA) design implemented in standard 0.18 μm CMOS technology. The proposed design eliminates the need for transmission line capacitors and, consequently, uses significantly smaller spiral inductors compared with the previous designs. Using the minimum size inductor, the bandwidth of the amplifiers is extended, and the quality factors of the on-chip inductor are improved. Proposed DA occupies the smallest die area (0.3μm*0.8μm) amongst the DAs reported with the same performance. A unity gain bandwidth of 10 GHz and a gain of 15 dB are measured. DC power dissipation is 56 mW.
منابع مشابه
Analysis and Design of High Gain, and Low Power CMOS Distributed Amplifier Utilizing a Novel Gain-cell Based on Combining Inductively Peaking and Regulated Cascode Concepts
In this study an ultra-broad band, low-power, and high-gain CMOS Distributed Amplifier (CMOS-DA) utilizing a new gain-cell based on the inductively peaking cascaded structure is presented. It is created bycascading of inductively coupled common-source (CS) stage and Regulated Cascode Configuration (RGC).The proposed three-stage DA is simulated in 0.13 μm CMOS process. It achieves flat and high ...
متن کاملEffective Design of a 3×4 Two Dimensional Distributed Amplifier Based on Gate Line Considerations
In this paper two dimensional wave propagation is used for power combining in drain nodes of a distributed amplifier (DA). The proposed two dimensional DA uses an electrical funnel to add the currents of drain nodes. The proposed structure is modified due to gate lines considerations. Total gain improvement is achieved by engineering the characteristic impedance of gate lines and also make appr...
متن کاملImproving Linearity of CMOS Variable-gain Amplifier Using Third-order Intermodulation Cancellation Mechanism and Intermodulation Distortion Sinking Techniques
This paper presents an improved linearity variable-gain amplifier (VGA) in 0.18-µm CMOS technology. The linearity improvement is resulted from employing a new combinational technique, which utilizes third-order-intermodulation (IM3) cancellation mechanism using second-order-intermodulation (IM2) injection, and intermodulation distortion (IMD) sinking techniques. The proposed VGA gain cell co...
متن کاملA New Ultra-Wideband Low Noise Amplifier With Continuous Gain Control
This paper presents a new variable gain low noise amplifier (VG-LNA) for ultra-wideband (UWB) applications. The proposed VG-LNA uses a common-source (CS) with a shunt-shunt active feedback as an input stage to realize input matching and partial noise cancelling. An output stage consists of a gain-boosted CS cascode and a gain control circuit that moves the high resonant frequency to higher freq...
متن کاملHigh - Gain Wideband CMOS Low Noise Amplifier with Two - Stage Cascode and Simplified Chebyshev Filter Sung -
ETRI Journal, Volume 29, Number 5, October 2007 ABSTRACT⎯An ultra-wideband low-noise amplifier is proposed with operation up to 8.2 GHz. The amplifier is fabricated with a 0.18-μm CMOS process and adopts a twostage cascode architecture and a simplified Chebyshev filter for high gain, wide band, input-impedance matching, and low noise. The gain of 19.2 dB and minimum noise figure of 3.3 dB are m...
متن کامل